Valley Electronics(HK)Limited Valley Electronics(HK)Limited

Transistors - FETs, MOSFETs - RF

制造商 Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated







































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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结果:
Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BLF7G27LS-90P,112

BLF7G27LS-90P,112

RF PFET, 2-ELEMENT, S BAND, SILI

NXP USA Inc.

3,341 -
RFQ
BLF7G27LS-90P,112

Datasheet

Tube - Active LDMOS (Dual), Common Source 2.5GHz ~ 2.7GHz 18.5dB 28 V 18A - 720 mA 16W 65 V
BLF8G10LS-270,112

BLF8G10LS-270,112

RF PFET, 1-ELEMENT, ULTRA HIGH F

NXP USA Inc.

3,734 -
RFQ
BLF8G10LS-270,112

Datasheet

Tube - Active LDMOS 820MHz ~ 960MHz 18.5dB 28 V 4.2µA - 2 A 270W 65 V
BLF6G20-110,112

BLF6G20-110,112

RF TRANSISTOR

NXP USA Inc.

2,711 -
RFQ
BLF6G20-110,112

Datasheet

Tray - Obsolete LDMOS 1.93GHz ~ 1.99GHz 19dB 28 V 29A - 900 mA 25W 65 V
BLF7G27L-100,112

BLF7G27L-100,112

RF TRANSISTOR

NXP USA Inc.

3,653 -
RFQ
BLF7G27L-100,112

Datasheet

Tube - Obsolete LDMOS 2.5GHz ~ 2.7GHz 18dB 28 V 28A - 900 mA 20W 65 V
BLF6G27LS-75,112

BLF6G27LS-75,112

RF TRANSISTOR

NXP USA Inc.

2,643 -
RFQ
BLF6G27LS-75,112

Datasheet

Tray - Obsolete LDMOS - - 28 V 18A - 600 mA 9W 65 V
BLF8G10LS-270V,112

BLF8G10LS-270V,112

RF PFET, 1-ELEMENT, ULTRA HIGH F

NXP USA Inc.

2,769 -
RFQ
BLF8G10LS-270V,112

Datasheet

Tube - Active LDMOS 871.5MHz ~ 891.5MHz 19.5dB 28 V - - 2 A 67W 65 V
BLD6G22L-50,112

BLD6G22L-50,112

RF TRANSISTOR

NXP USA Inc.

2,624 -
RFQ
BLD6G22L-50,112

Datasheet

Tray - Obsolete LDMOS (Dual), Common Source 2.14GHz 14dB 28 V 10.2A - 170 mA 8W 65 V
BLD6G21L-50,112

BLD6G21L-50,112

RF TRANSISTOR

NXP USA Inc.

3,624 -
RFQ
BLD6G21L-50,112

Datasheet

Tray - Obsolete LDMOS (Dual), Common Source 2.02GHz 14.5dB 28 V 10.2A - 170 mA 8W 65 V
CLF1G0060S-10U

CLF1G0060S-10U

RF SMALL SIGNAL FIELD-EFFECT TRA

NXP USA Inc.

2,677 -
RFQ
CLF1G0060S-10U

Datasheet

Bulk - Active GaN HEMT 3GHz ~ 3.5GHz 14.5dB 50 V - - 50 mA 10W 150 V
BLF6G10LS-135R,112

BLF6G10LS-135R,112

RF TRANSISTOR

NXP USA Inc.

2,789 -
RFQ
BLF6G10LS-135R,112

Datasheet

Tray - Obsolete LDMOS 871.5MHz ~ 891.5MHz 21dB 28 V 32A - 950 mA 26.5W 65 V
BLD6G22LS-50,112

BLD6G22LS-50,112

RF TRANSISTOR

NXP USA Inc.

2,189 -
RFQ
BLD6G22LS-50,112

Datasheet

Tray - Obsolete LDMOS (Dual), Common Source 2.14GHz 14dB 28 V 10.2A - 170 mA 8W 65 V
BLF7G10L-250,112

BLF7G10L-250,112

RF PFET, 1-ELEMENT, ULTRA HIGH F

NXP USA Inc.

3,927 -
RFQ
BLF7G10L-250,112

Datasheet

Tube - Active LDMOS 920MHz ~ 960MHz 19.5dB 30 V - - 1.8 A 60W 65 V
BLF7G10LS-250,112

BLF7G10LS-250,112

N-CHANNEL, MOSFET

NXP USA Inc.

2,458 -
RFQ
BLF7G10LS-250,112

Datasheet

Tube - Active LDMOS 869MHz ~ 960MHz 19.5dB 30 V 5µA - 1.8 A 250W 65 V
BLF7G27LS-140,112

BLF7G27LS-140,112

RF PFET, 1-ELEMENT, S BAND, SILI

NXP USA Inc.

2,714 -
RFQ
BLF7G27LS-140,112

Datasheet

Tube - Active LDMOS 2.5GHz ~ 2.7GHz 16.5dB 28 V 28A - 1.3 A 30W 65 V
BLF7G27L-150P,112

BLF7G27L-150P,112

RF TRANSISTOR

NXP USA Inc.

3,548 -
RFQ
BLF7G27L-150P,112

Datasheet

Tube - Obsolete LDMOS (Dual), Common Source 2.5GHz ~ 2.7GHz 16.5dB 28 V 37A - 1.2 A 30W 65 V
BLF7G24L-160P,112

BLF7G24L-160P,112

RF TRANSISTOR

NXP USA Inc.

3,376 -
RFQ
BLF7G24L-160P,112

Datasheet

Tube - Obsolete LDMOS (Dual), Common Source 2.3GHz ~ 2.4GHz 18.5dB 28 V - - 1.2 A 30W 65 V
BLF2425M7LS140,112

BLF2425M7LS140,112

RF PFET, 1-ELEMENT, S BAND, SILI

NXP USA Inc.

3,641 -
RFQ
BLF2425M7LS140,112

Datasheet

Tube - Active LDMOS 2.45GHz 18.5dB 28 V - - 1.3 A 140W 65 V
BLF7G24LS-160P,112

BLF7G24LS-160P,112

RF PFET, 2-ELEMENT, S BAND, SILI

NXP USA Inc.

2,329 -
RFQ
BLF7G24LS-160P,112

Datasheet

Tube - Active LDMOS (Dual), Common Source 2.3GHz ~ 2.4GHz 18.5dB 28 V - - 1.2 A 30W 65 V
BLF7G22LS-250P,112

BLF7G22LS-250P,112

N-CHANNEL, MOSFET

NXP USA Inc.

3,403 -
RFQ
BLF7G22LS-250P,112

Datasheet

Tube - Active LDMOS (Dual), Common Source 2.11GHz ~ 2.17GHz 18.5dB 28 V 2.8µA - 1.9 A 250W 65 V
MRF6VP3450HSR5-NXP

MRF6VP3450HSR5-NXP

RF ULTRA HIGH FREQUENCY BAND, N-

NXP USA Inc.

2,040 -
RFQ
MRF6VP3450HSR5-NXP

Datasheet

Bulk - Active LDMOS (Dual) 470MHz ~ 860MHz 22.5dB 50 V 10µA - 1.4 A 450W 110 V
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